?2001 fairchild semiconductor corporation FMBL1G100US60 rev. a igbt FMBL1G100US60 july 2001 absolute maximum ratings t c = 25 c unless otherwise noted notes : (1) repetitive rating : pulse width limited by max. junction temperature symbol description FMBL1G100US60 units v ces collector-emitter voltage 600 v v ges gate-emitter voltage 20 v i c collector current @ t c = 25 c 100 a i cm (1) pulsed collector current 200 a i f diode continuous forward current @ t c = 100 c 100 a i fm diode maximum forward current 200 a t sc short circuit withstand time @ t c = 100 c10 us p d maximum power dissipation @ t c = 25 c 400 w t j operating junction temperature -40 to +150 c t stg storage temperature range -40 to +125 c v iso isolation voltage @ ac 1minute 2500 v mounting torque power terminals screw : m5 2.0 n.m mounting screw : m5 2.0 n.m FMBL1G100US60 molding type module general description fairchild?s insulated gate bipolar transistor (igbt) power modules provide low conduction and switching losses as well as short circuit ruggedness. they are designed for applications such as motor control, uninterrupted power supplies (ups) and general inverters where short circuit ruggedness is a required feature. features ? ul certified no. e209204 ? short circuit rated 10us @ t c = 100 c, v ge = 15v ? high speed switching ? low saturation voltage : v ce(sat) = 2.2 v @ i c = 100a ? high input impedance ? fast & soft anti-parallel fwd application ? boost (step up) converter internal circuit diagram c1 e1/c2 e2 g2 e2 package code : 7pm-aa
?2001 fairchild semiconductor corporation FMBL1G100US60 rev. a FMBL1G100US60 electrical characteristics of igbt t c = 25 c unless otherwise noted symbol parameter test conditions min. typ. max. units off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 250ua 600 -- -- v ? b vces / ? t j temperature coeff. of breakdown voltage v ge = 0v, i c = 1ma -- 0.6 -- v/ c i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 250 ua i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 100 na on characteristics v ge(th) g-e threshold voltage i c = 0v, i c =100ma 5.0 -- 8.5 v v ce(sat) collector to emitter saturation voltage i c = 100a , v ge = 15v -- 2.2 2.8 v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz -- 10840 -- pf c oes output capacitance -- 963 -- pf c res reverse transfer capacitance -- 228 -- pf switching characteristics t d(on) turn-on delay time v cc = 300 v, i c = 100a, r g = 2.4 ? , v ge = 15v inductive load, t c = 25 c -- 25 -- ns t r rise time -- 70 -- ns t d(off) turn-off delay time -- 120 150 ns t f fall time -- 86 200 ns e on turn-on switching loss -- 4.0 -- mj e off turn-off switching loss -- 2.6 -- mj e ts total switching loss -- 6.6 -- mj t d(on) turn-on delay time v cc = 300 v, i c = 100a, r g = 2.4 ? , v ge = 15v inductive load, t c = 125 c -- 34 -- ns t r rise time -- 96 -- ns t d(off) turn-off delay time -- 175 -- ns t f fall time -- 160 -- ns e on turn-on switching loss -- 5.0 -- mj e off turn-off switching loss -- 4.9 -- mj e ts total switching loss -- 9.9 -- mj t sc short circuit withstand time v cc = 300 v, v ge = 15v @ t c = 100 c 10 -- -- us q g total gate charge v ce = 300 v, i c = 100a, v ge = 15v -- 425 500 nc q ge gate-emitter charge -- 80 -- nc q gc gate-collector charge -- 200 -- nc
?2001 fairchild semiconductor corporation FMBL1G100US60 rev. a FMBL1G100US60 electrical characteristics of diode t c = 25 c unless otherwise noted thermal characteristics symbol parameter test conditions min. typ. max. units v fm diode forward voltage i f = 100a t c = 25 c -- 1.9 2.8 v t c = 100 c -- 1.8 -- t rr diode reverse recovery time i f = 100a di / dt = 200 a/us t c = 25 c -- 90 130 ns t c = 100 c -- 130 -- i rr diode peak reverse recovery current t c = 25 c -- 9 12 a t c = 100 c -- 12 -- q rr diode reverse recovery charge t c = 25 c -- 405 790 nc t c = 100 c -- 780 -- symbol parameter typ. max. units r jc junction-to-case (igbt part, per 1/2 module) -- 0.31 c / w r jc junction-to-case (diode part, per 1/2 module) -- 0.7 c / w r cs case-to-sink (conductive grease applied) 0.05 -- c / w weight weight of module -- 190 g
?2001 fairchild semiconductor corporation FMBL1G100US60 rev. a FMBL1G100US60 0 4 8 12 16 20 0 4 8 12 16 20 common emitter t c = 125 200a 100a i c = 50a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] 048121620 0 4 8 12 16 20 common emitter t c = 25 200a 100a i c = 50a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] 0 20 40 60 80 100 120 0.1 1 10 100 1000 duty cycle : 50% t c = 100 power dissipation = 130w v cc = 300v load current : peak of square wave frequency [khz] load current [a] 0 50 100 150 0 1 2 3 4 5 200a 100a i c = 50a common emitter v ge = 15v collector - emitter voltage, v ce [v] case temperature, t c [ ] 02468 0 30 60 90 120 150 180 210 240 20v 12v 15v v ge = 10v common emitter t c = 25 collector current, i c [a] collector - emitter voltage, v ce [v] 0.3 1 10 20 0 50 100 150 200 250 common emitter v ge = 15v t c = 25 t c = 125 collector current, i c [a] collector - emitter voltage, v ce [v] fig 1. typical output characteristics fig 2. typical saturation voltage characteristics fig 3. saturation voltage vs. case temperature at variant current level fig 4. load current vs. frequency fig 5. saturation voltage vs. v ge fig 6. saturation voltage vs. v ge
?2001 fairchild semiconductor corporation FMBL1G100US60 rev. a FMBL1G100US60 20 30 40 50 60 70 80 90 100 100 1000 toff tf common emitter v cc = 300v, v ge = 15v r g = 2.4 ? t c = 25 t c = 125 switching time [ns] collector current, i c [a] 20 30 40 50 60 70 80 90 100 10 100 300 ton tr common emitter v cc = 300v, v ge = 15v r g = 2.4 ? t c = 25 t c = 125 switching time [ns] collector current, i c [a] 110100 1000 10000 20000 eoff eon common emitter v ? = 300v, v ge = 15v i c = 100a t c = 25 t c = 125 switching loss [uj] gate resistance, r g [ ? ] 6 10 100 50 100 1000 3000 tf tf toff common emitter v cc = 300v, v ge = 15v i c = 100a t c = 25 t c = 125 switching time [ns] gate resistance, r g [ ? ] 110100 50 100 1000 common emitter v cc = 300v, v ge = 15v i c = 100a t c = 25 t c = 125 ton tr switching time [ns] gate resistance, r g [ ? ] 0.5 1 10 30 0 5000 10000 15000 20000 25000 30000 cres coes cies common emitter v ge = 0v, f = 1mhz t c = 25 capacitance [pf] collector - emitter voltage, v ce [v] fig 7. capacitance characteristics fig 8. turn-on characteristics vs. gate resistance fig 9. turn-off characteristics vs. gate resistance fig 10. switching loss vs. gate resistance fig 11. turn-on characteristics vs. collector current fig 12. turn-off characteristics vs. collector current
?2001 fairchild semiconductor corporation FMBL1G100US60 rev. a FMBL1G100US60 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1e-3 0.01 0.1 1 t c = 25 igbt : diode : thermal response, zthjc [ /w] rectangular pulse duration [sec] 1 10 100 1000 1 10 100 safe operating area v ge = 20v, t c = 100 o c collector current, i c [a] collector-emitter voltage, v ce [v] 0.3 1 10 100 1000 0.1 1 10 100 500 single nonrepetitive pulse t c = 25 curves must be derated linerarly with increase in temperature 50us 100us 1 ? dc operation i c max. (continuous) i c max. (pulsed) collector current, i c [a] collector-emitter voltage, v ce [v] 0 100 200 300 400 500 0 3 6 9 12 15 200 v v cc = 100 v 300 v common emitter r l = 3 ? t c = 25 gate - emitter voltage, v ge [ v ] gate charge, qg [ nc ] 20 30 40 50 60 70 80 90 100 100 1000 10000 eon eoff eon eoff common emitter v cc = 300v, v ge = 15v r g = 2.4 ? t c = 25 t c = 125 switching loss [uj] collector current, i c [a] 0 100 200 300 400 500 600 700 0.1 1 10 100 600 single nonrepetitive pulse t j 125 v ge = 15v r g = 2.4 ? collector current, i c [a] collector-emitter voltage, v ce [v] fig 14. gate charge characteristics fig 13. switching loss vs. collector current fig 15. soa characteristics fig 16. turn-off soa characteristics fig 17. rbsoa characteristics fig 18. transient thermal impedance
?2001 fairchild semiconductor corporation FMBL1G100US60 rev. a FMBL1G100US60 0 20406080100 5 10 20 i rr t rr t rr common cathode di/dt = 200a/ ? t c = 25 t c = 100 i rr peak reverse recovery current, i rr [a] reverse recovery time, t rr [x10ns] forward current, i f [a] 01234 0 50 100 150 200 250 300 common cathode v ge = 0v t c = 25 t c = 125 forward current, i f [a] forward voltage, v f [v] fig 20. reverse recovery characteristics fig 19. forward characteristics
?2001 fairchild semiconductor corporation FMBL1G100US60 rev. a FMBL1G100US60 package dimension 7pm-aa (fs pkg code bd) dimensions in millimeters
?2001 fairchild semiconductor corporation trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor international. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. h3 a cex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? microwire? optologic? optoplanar? pacman? pop? power247? powertrench ? qfet? qs? qt optoelectronics? quiet series? slient switcher ? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? trutranslation? tinylogic? uhc? ultrafet ? vcx? star*power is used under license
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